DB-55015-490 Datasheet RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs

Manufacturer: STMicroelectronics

DB-55015-490 rf power amplifier using 1 x pd55015-e n-channel enhancement-mode lateral mosfets by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	DB-55015-490
Manufacturer	STMicroelectronics
File Size	467.19 KB
Description	RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
Datasheet	DB-55015-490 Datasheet

General Description

The DB-55015-490 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications.

Table 1.

Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55015-490 March 2009 Rev 1 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation.

Overview

DB-55015-490 www.datasheet4u.com RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs Preliminary.

Key Features

Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.2 V Output power: 15 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 62 % Load mismatch: 20:1 Beo free amplifier.

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